Light-emitting device, manufacturing method thereof and display module using the same

ABSTRACT

The application discloses a light-emitting device including a carrier, a light-emitting element and a connecting structure. The carrier includes a first connecting portion and a first necking portion extended from the first connecting portion. The first connecting portion has a first width, and the first necking portion has a second width. The second width is less than the first width. The light-emitting element includes a first light-emitting layer being able to emit a first light and a first contacting electrode formed under the first light-emitting layer. The first contacting electrode is corresponded to the first connecting portion. The connecting structure includes a first electrical connecting portion and a protection portion surrounding the first electrical connecting portion. The first electrical connecting portion is electrically connected to the first connecting portion and the first contacting electrode. The first connecting portion substantially is located within a range surrounded by the protection portion.

RELATED APPLICATION DATA

This application claims the right of priority of TW Application No.107122868, filed on Jul. 3, 2018, which claim the right of domesticpriority of TW Application No. 107105393, filed on Feb. 14, 2018, andthe content of which is hereby incorporated by reference in itsentirety.

TECHNICAL FIELD

This present application is related to a light-emitting device and amanufacturing method thereof, and especially a light-emitting device,which has a carrier with certain structure and a certain connection, anda manufacturing method thereof.

DESCRIPTION OF BACKGROUND ART

Light-emitting diode (LED) has special properties, such as low powerconsumption, low heat radiation, long lifetime, high impact resistance,small volume, high responding speed so LED is widely used inapplications requiring light-emitting units, such as vehicle, householdelectric appliance, display, or lighting fixture.

LED is able to emit monochromatic light, so LED is suitable to be apixel of display like outdoor or indoor display, and one of the trendsfor display technology development is to increase the resolution of thedisplay. For increasing the resolution of the display, the LED should beminiaturized.

SUMMARY OF THE DISCLOSURE

The application discloses a light-emitting device including a carrier, alight-emitting element and a connecting structure. The carrier includesa first connecting portion and a first necking portion extended from thefirst connecting portion. The first connecting portion has a firstwidth, and the first necking portion has a second width. The secondwidth is less than the first width. The light-emitting element includesa first light-emitting layer being able to emit a first light and afirst contacting electrode formed under the first light-emitting layer.The first contacting electrode is corresponded to the first connectingportion. The connecting structure includes a first electrical connectingportion and a protection portion surrounding the first electricalconnecting portion. The first electrical connecting portion iselectrically connected to the first connecting portion and the firstcontacting electrode. The first connecting portion substantially islocated within a range surrounded by the protection portion.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A shows a three-dimensional figure of a light-emitting device inaccordance with one embodiment of present application.

FIG. 1B shows a top view of the light-emitting device disclosed in FIG.1A.

FIG. 1C shows a bottom view of the light-emitting device disclosed inFIG. 1A.

FIG. 1D shows a cross-section of the light-emitting device disclosed inFIG. 1A.

FIG. 2A shows a top view of a carrier of a light-emitting device inaccordance with one embodiment of present application.

FIG. 2B shows a top view of a carrier and a connecting structure of alight-emitting device in accordance with one embodiment of presentapplication.

FIG. 2C shows an enlarged diagram of a first region and a firstcontacting region corresponding to a first light-emitting unit disclosedin FIGS. 2A and 2B.

FIG. 3A shows a top view of a first region and a first contacting regioncorresponding to a first light-emitting unit in accordance with oneembodiment of present application.

FIG. 3B shows a cross-sectional view of the first light-emitting unitconnected to the first contacting region disclosed FIG. 3A.

FIG. 4 shows a top view of a carrier of a light-emitting device inaccordance with one embodiment of present application.

FIGS. 5A-5J show a process of manufacturing a light-emitting device inaccordance with one embodiment of present application.

FIG. 6A shows a three-dimensional figure of a light-emitting device inaccordance with one embodiment of present application.

FIG. 6B shows a top view of the light-emitting device disclosed in FIG.6A.

FIG. 6C shows a bottom view of the light-emitting device disclosed inFIG. 6A.

FIG. 7 shows a top view of a carrier of a light-emitting device inaccordance with one embodiment of present application.

FIG. 8 shows a display module in accordance with one embodiment ofpresent application.

FIG. 9A shows a display device in accordance with one embodiment ofpresent application.

FIG. 9B shows a light-emitting module in accordance with one embodimentof present application.

FIGS. 10A˜10K show a manufacturing process of a display module inaccordance with one embodiment of present application.

FIGS. 11A-11I show a manufacturing process of a display module inaccordance with one embodiment of present application.

FIG. 12A shows a three-dimensional figure of a light-emitting device inaccordance with one embodiment of present application.

FIG. 12B shows a top view of the light-emitting device disclosed in FIG.12A.

FIG. 12C shows a bottom view of the light-emitting device disclosed inFIG. 12A.

FIG. 13A shows a three-dimensional figure of a light-emitting device inaccordance with one embodiment of present application.

FIG. 13B shows a top view of the light-emitting device disclosed in FIG.13A.

FIG. 13C shows a bottom view of the light-emitting device disclosed inFIG. 13A.

FIG. 14A shows a three-dimensional figure of a light-emitting device inaccordance with one embodiment of present application.

FIG. 14B shows a top view of the light-emitting device disclosed in FIG.14A.

FIG. 14C shows a bottom view of the light-emitting device disclosed inFIG. 14A.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

The embodiments of the application are illustrated in details, and areplotted in the drawings. The same or the similar parts in the drawingsand the specification have the same reference numeral. In the drawings,the shape and thickness of a specific element could be shrunk orenlarged. It should be noted that the element which is not shown in thedrawings or described in the following description could be thestructure well-known by the person having ordinary skill in the art.

FIG. 1A shows a three-dimensional figure of a light-emitting device 100in accordance with one embodiment of present application. FIG. 1B showsa top view of the light-emitting device 100 disclosed in FIG. 1A. FIG.1C shows a bottom view of the light-emitting device 100 disclosed inFIG. 1A. The light-emitting device 100 includes a carrier 120, alight-emitting element 140, a connecting structure 160, and atransparent unit 180. In one embodiment, the light-emitting element 140includes a first light-emitting unit 142, a second light-emitting unit144, and a third light-emitting unit 146. In one embodiment, thelight-emitting element 140 is formed on the carrier 120, the connectingstructure 160 is formed between the carrier 120 and the light-emittingelement 140, and the transparent unit 180 covers the light-emittingelement 140 and the connecting structure 160.

In one embodiment, the carrier 120 includes an insulating layer 122, anupper conductive layer 124, and a lower conductive layer 126. The upperconductive layer 124 electrically connects the light-emitting element140 and the lower conductive layer 126. The lower conductive layer 126electrically connects the external power supply. In one embodiment, theupper conductive layer 124 electrically connects the lower conductivelayer 126 through the conductive via (not shown). The conductive viapenetrates the insulating layer 122, and can be formed in the peripheryor interior of the insulating layer 122. In one embodiment, the upperconductive layer 124 is formed upon the insulating layer 122 and ofpatterned structure, and the lower conductive layer 126 is formed underthe insulating layer 122 and of patterned structure. Referring to FIG.1C, in one embodiment, the first, second, and third light-emitting units142, 144, 146 have one common electrode, so the lower conductive layer126 has four electrode pads. Specifically, in the embodiment, the commonelectrode means an end point physically and electrically connectingmultiple electrodes of same polarity of multiple light-emitting units.In one embodiment, the first, second, and third light-emitting units142, 144, 146 are light-emitting diodes, and the p-type semiconductorslayers (not shown) thereof share the same electrode. In anotherembodiment, the n-type semiconductor layers (not shown) of the first,second, and third light-emitting units 142, 144, 146 share the sameelectrode. In one embodiment, a shape of one electrode pad 126′ of thelower conductive layer 126 is different from the shapes of the otherthree electrode pads 126″ for identification purpose. In the embodiment,in the lower conductive layer 126, one corner of the electrode pad 126′of the common electrode has a bevel surface 126 b as shown in FIG. 1C.Namely, the shape of the electrode pad 126′ is a pentagon and differentfrom the other three electrode pads 126″, which are quadrangles. Thefour electrode pads 126′, 126″ are located in the four cornersrespectively and electrically connects to four external electrodes. Inanother embodiment, there are six electrodes for the first, second, andthird light-emitting units 142, 144, 146 to electrically connect toexternal power supply independently so the lower conductive layer 126has six electrode pads.

The material of the insulating layer 122 can be epoxy resin, BT(Bismaleimide Triazine) resin, polyimide resin, composite of epoxy resinand fiberglass, or composite of BT resin and fiberglass. The material ofthe upper conductive layer 124 and the lower conductive layer 126 can bemetal, such as Cu, Sn, Al, Ag or Au. In one embodiment, if thelight-emitting device 100 is a pixel of a display device, alight-absorbing layer (not shown), such as black coating layer, can beformed on the surface of the insulating layer 122 to enhance contrast ofthe display device.

Referring to FIG. 1A, in the embodiment, the number of thelight-emitting unit is three, but it is not a limitation. In otherembodiment, the number of the light-emitting unit can be one, two, four,or five. In one embodiment, the first light-emitting unit 142, thesecond light-emitting unit 144, and the third light-emitting unit 146can be LED (light-emitting diode) dies for emitting different dominantwavelengths (Wd) or different colors. In one embodiment, the firstlight-emitting unit 142 is a red LED die, which can be driven by anelectrical current provided by power supply to emit a first light with adominant wavelength or peak wavelength between 600 nm˜660 nm. FIG. 1Dshows a cross-sectional view along I-I′ in FIG. 1B. In one embodiment,the first light-emitting unit 142 includes a substrate 142 a, alight-emitting layer 142 b, and contacting electrodes 142 c 1, 142 c 2,wherein the light-emitting layer 142 b has one side facing the substrate142 a and another side facing the contacting electrodes 142 c 1, 142 c2. The substrate 142 a can carry or support the light-emitting layer 142b. Besides, the substrate 142 a is distant from a surface of thelight-emitting layer 142 b, which is an upper surface of the firstlight-emitting unit 142 and is also a light extraction surface thereof.In one embodiment, the substrate 142 a is a transparent ceramicsubstrate, such as Aluminum Oxide substrate and bound with thelight-emitting layer 142 b through a bonding layer (not shown).

In one embodiment, the second light-emitting unit 144 is a green LEDdie, which can emit a second light with a dominant wavelength or peakwavelength between 510 nm˜560 nm. The composition of the secondlight-emitting unit 144 is similar to that of the first light-emittingunit 142. The second light-emitting unit 144 includes a substrate, alight-emitting layer, and contacting electrodes, wherein the compositionof the light-emitting layer of the second light-emitting unit 144 isdifferent from that of the first light-emitting unit 142. Besides, inone embodiment, the substrate of the second light-emitting unit 144 is agrowth substrate, such as sapphire, for epitaxially growing thelight-emitting layer. The structure of the third light-emitting unit 146is similar to that of the first light-emitting unit 144, wherein thecomposition of the light-emitting layer of the third light-emitting unit146 is different from that of the second light-emitting unit 144.

In another embodiment, the first light-emitting unit 142 includes a LEDdie covered by a wavelength conversion material, wherein the LED die isable to emit blue light or UV light, with a wavelength shorter than thatof red light, and the wavelength conversion material is able to convertblue light or UV light into red light. The second light-emitting unit144 includes a LED die covered by a wavelength conversion material,wherein the LED die is able to emit blue light or UV light, with awavelength shorter than that of green light, and the wavelengthconversion material is able to convert blue light or UV light into greenlight. The third light-emitting unit 146 includes a LED die covered by awavelength conversion material, wherein the LED die is able to emit UVlight, with a wavelength shorter than that of blue light, and thewavelength conversion material is able to convert blue light or UV lightinto blue light.

Referring to FIG. 1B, in one embodiment, the first light-emitting unit142, the second light-emitting unit 144, and the third light-emittingunit 146 are arranged as a triangle and respectively located on thethree vertices. In another embodiment, the first light-emitting unit142, the second light-emitting unit 144, and the third light-emittingunit 146 are arranged as a straight line.

Referring to FIG. 1A, in one embodiment, the connecting structure 160includes a first block 162, a second block 164, and a third block 166.The first block 162 of the connecting structure 160 is able toelectrically and physically connect the carrier 120 and the firstlight-emitting unit 142. Furthermore, referring to FIG. 1D, the firstblock 162 includes a first electrical connecting portion 162 a, a secondelectrical connecting portion 162 b, and a first protection portion 162c. In one embodiment, the first electrical connecting portion 162 aelectrical connects the upper conductive layer 124 and the contactingelectrodes 142 c 1, the second electrical connecting portion 162 belectrically connects the upper conductive layer 124 and the contactingelectrodes 142 c 2, and the first protection portion 162 c surrounds thefirst electrical connecting portion 162 a and the second electricalconnecting portion 162 b. In one embodiment, the contours of the firstelectrical connecting portion 162 a and the second electrical connectingportion 162 b can be flat or bumpy. In one embodiment, the firstelectrical connecting portion 162 a and/or the second electricalconnecting portion 162 b have neck shape. In other words, the firstelectrical connecting portion 162 a has a width W1 between thecontacting electrode 142 c 1 and the upper conductive layer 124 smallerthan a width W1′ of an interface I1 between the first electricalconnecting portion 162 a and the upper conductive layer 124, or thesecond electrical connecting portion 162 b has a width W2 between thecontacting electrode 142 c 2 and the upper conductive layer 124 smallerthan a width W2′ of an interface 12 between the second electricalconnecting portion 162 b and the upper conductive layer 124. In oneembodiment, the first electrical connecting portion 162 a and the secondelectrically connecting portion 162 b are mainly formed of electricallyconductive material mixing with resin. In one embodiment, the firstelectrical connecting portion 162 a and the second electricallyconnecting portion 162 b includes cavities 162 a 1, 162 b 1. In anotherembodiment, the first electrical connecting portion 162 a and the secondelectrical connecting portion 162 b are completely made of electricallyconductive material.

In one embodiment, the first protection portion 162 c is located betweenthe first electrical connecting portion 162 a and the second electricalconnecting portion 162 b, surrounds and covers the first electricalconnecting portion 162 a and the second electrical connecting portion162 b, and connects the carrier 120 and a surface of the firstlight-emitting unit 142. The first protection portion 162 c not onlyprotects the first electrical connecting portion 162 a and the secondelectrical connecting portion 162 b, but also prevents the electricallyconductive material from being oxidized by the moisture of theenvironment and prevents the first electrical connecting portion 162 aand the second electrical connecting portion 162 b which are softened ormelted in high temperature from being short-circuited. Besides, thefirst protection portion 162 c is able to enhance bonding strengthbetween the carrier 120 and a surface of the first light-emitting unit142. In one embodiment, the first protection portion 162 c is mainlymade of resin and may include little electrically conductive material.It is worth noted that the electrically conductive material is notpresented continuously between the first electrical connecting portion162 a and the second electrical connecting portion 162 b. In anotherembodiment, the first protection portion 162 c is made of resin withoutelectrically conductive material.

The electrically conductive materials of the first electrical connectingportion 162 a, the second electrical connecting portion 162 b and thefirst protection portion 162 c can be the same or different, wherein theelectrically conductive material includes Au, Ag, Cu or alloy of Sn. Inone embodiment, the electrically conductive material includes metal withlow melting point or an alloy with low liquidus melting point. In oneembodiment, the temperature of the low melting point of the metal or thelow liquidus melting point of the alloy is lower 210° C. In otherembodiment, the temperature of the low melting point of the metal or thelow liquidus melting point of the alloy is lower 170° C., wherein thealloy with low liquidus melting point includes InSn alloy or BiSn alloy.

The resin contained in the first electrical connecting portion 162 a,the second electrical connecting portion 162 b, and the first protectionportion 162 c can be the same or different, wherein the resin may bethermosetting resin. In one embodiment, the resin may be thermosettingepoxy. In one embodiment, the resin has a glass transition temperature(Tg), wherein Tg is larger than 50° C. In the other embodiment, theresin has a glass transition temperature (Tg) larger than 120° C. In oneembodiment, the difference of the glass transition temperature (Tg)between the first protection portion 162 c and the electricallyconductive materials of the first electrical connecting portion 162 aand/or the second electrical connecting portion 162 b is smaller than50° C. In one embodiment, a weight ratio of the electrically conductivematerial to the first block 162 is between 40% and 80%. In anotherembodiment, the weight ratio of the electrically conductive material tothe first block 162 is between 30% and 70%.

Referring to FIG. 1A, in one embodiment, the second block 164 of theconnecting structure 160 is able to electrically and physically connectthe carrier 120 and the second light-emitting unit 144. Similarly, inone embodiment, the third block 166 of the connecting structure 160 isable to electrically and physically connect the carrier 120 and thethird light-emitting unit 146. The specific structure, function andmaterial of the second block 164 and the third block 166 are the same asor similar to the first block 162, which can be referred to FIG. 1D andthe corresponding paragraphs.

Referring to FIG. 1A, in one embodiment, the transparent unit 180 coversthe light-emitting element 140, the connecting structure 160, and theupper conductive layer 124. In one embodiment, the transparent unit 180directly contacts the first light-emitting unit 142, the secondlight-emitting unit 144, the third light-emitting unit 146, the firstblock 162, the second block 164 and the third block 166 of theconnecting structure 160, and the upper conductive layer 124. In oneembodiment, a side wall of the transparent unit 180 and a side wall ofthe carrier 120 are coplanar. In another embodiment, the side wall ofthe transparent unit 180 and the side wall of the carrier 120 are notcoplanar. A surface (not shown) is between the side wall of thetransparent unit 180 and the side wall of the carrier 120, and thesurface is not parallel to the side wall of the transparent unit 180 andthe side wall of the carrier 120, wherein the surface may be a lowersurface of the transparent unit 180 or the upper surface of the carrier120. The transparent unit 180 is able to protect the light-emittingelement 140, the connecting structure 160, and the upper conductivelayer 124. Besides, a light emitted from the light-emitting element 140is able to penetrate the transparent unit 180, so one surface of thetransparent unit 180 can be as a light extraction surface of thelight-emitting device 100. In one embodiment, the penetration rate ofthe transparent unit 180 for light with wavelength between 440 nm˜470nm, 510 nm˜540 nm, and 610 nm˜640 nm is larger than 80%. In oneembodiment, the refractive index of the transparent unit 180 is between1.3˜2.0. In another embodiment, the refractive index of the transparentunit 180 is between 1.35˜1.70. Furthermore, the transparent unit 180 isable to prevent the upper conductive layer 124 from being oxidized bymoisture of the environment.

The material of the transparent unit 180 may be resin, ceramic, glass orthe combination thereof. In one embodiment, the material of thetransparent unit 180 is heat curing resin, wherein the heat curing resinmay be epoxy or silicone resin. In one embodiment, the material of thetransparent unit 180 is silicone resin, wherein the composition ofsilicone resin is able to be adjusted by the requirement of the physicaland optical characteristics. In one embodiment, the transparent unit 180is made of silicone resin having aliphatic hydrocarbon group, such asmethyl cyclosiloxane compound, with better extensibility for bearingthermal stress from the light-emitting element 140. In the otherembodiment, the transparent unit 180 is made of silicone resin havingaromatic hydrocarbon group, such as phenyl methicone compound, withlarger refractive index for improving light extraction percentage of thelight-emitting element 140. The smaller difference of the refractiveindices of the materials between the light-emitting element 140 and thelight extraction surface thereof, the larger the light angle is, and thelight extraction percentage can be improved. In one embodiment, thematerial of the light extraction surface of the light-emitting element140 is sapphire, of which the refractive index is about 1.77, and thematerial of the transparent unit 180 is silicone resin having aromatichydrocarbon group, of which the refractive index is larger than 1.9.

FIG. 2A shows a top view of a carrier 220 of a light-emitting device 200in accordance with one embodiment of present application. FIG. 2B showsa top view of a carrier and a connecting structure of the light-emittingdevice 200 in accordance with one embodiment of present application.FIG. 2C shows an enlarged diagram of a first region 210 and a firstcontacting region 240 corresponding to a first light-emitting unit 272disclosed in FIGS. 2A and 2B. In one embodiment, FIGS. 2A˜2C and FIGS.1A˜1D show the same embodiment, so FIGS. 2A˜2C can be interpreted withFIGS. 1A˜1D. FIGS. 2A-2C and FIGS. 1A˜1D are able to show differentembodiments. In one embodiment, the carrier 220 includes an upperconductive layer, wherein the upper conductive layer includes a firstconnecting region 240, a second connecting region 260, and a thirdconnecting region 280. In one embodiment, the first connecting region240 is corresponding to the first light-emitting unit 272. The secondconnecting region 260 is corresponding to a second light-emitting unit274. The third connecting region 280 is corresponding to a thirdlight-emitting unit 276. Taking the first light-emitting unit 272 andthe corresponding first connecting region 240 as an example, in oneembodiment, the first connecting region 240 includes a first connectingportion 242, a first necking portion 244, a second connecting portion246 and a second necking portion 248. And, referring to FIG. 2C, thefirst necking portion 244 can be extended from the first connectingportion 242 or connect the first connecting portion 242 to each other.The first connecting portion 242 can be a main electrical connection fora contacting electrode 272-1 of the first light-emitting unit 272. Thefirst necking portion 244 can connect to a portion of the upperconductive layer to be a bridge of outside electrical connection. In oneembodiment, the first connecting portion 242 has an area same as or besimilar to the area of the contacting electrode 272-1 of the firstlight-emitting unit 272. In one embodiment, an area ratio of the firstconnecting portion 242 to the contacting electrode 272-1 of the firstlight-emitting unit 272 is between 0.8 and 12. Besides, a width Wb ofthe first connecting portion 242 is larger than a width Wn of the firstnecking portion 244. In one embodiment, an ratio of the width Wn of thefirst necking portion 244 to the width Wb of the first connectingportion 242 is smaller than 0.6. Similarly, an area ratio of the secondconnecting portion 246 to the other contacting electrode 272-2 of thefirst light-emitting unit 272 is between 0.8 and 12. A ratio of thewidth Wn of the second necking portion 248 to the width Wb of the firstconnecting portion 246 is smaller than 0.6. The width Wb and the widthWn respectively mean the largest widths of the connecting portion andthe necking portion. For example, as the shape of the connecting portionis a circle, the width Wb of the connecting portion is the diameter ofthe circle. In one embodiment, the smallest distance between the firstconnecting portion 242 and the second connecting portion 246 is smallerthan 100 μm. In another embodiment, the smallest distance between thefirst connecting portion 242 and the second connecting portion 246 issmaller than 50 μm.

Referring to FIG. 2B, in one embodiment, the connecting structureincludes the first region 210, a second region 230 and a third region250. In one embodiment, as shown in FIG. 2A, the first contacting region240 connects the first light-emitting unit 272 through the first region210 of the connecting structure. A first electrical joint portion 214 ofthe first region 210 is formed on the first connecting portion 242 andelectrically connects one electrode the first light-emitting unit 272,and a second electrical joint portion 216 is formed on the secondconnecting portion 246 and electrically connects to another electrode ofthe first light-emitting unit 272. A first protection portion 212 coversthe first electrical joint portion 214 and the second electrical jointportion 216. Besides, as shown in FIG. 2A, in one embodiment, the firstconnecting portion 242 is approximately located in a region surroundedby first protection portion 212. In one embodiment, the area which thefirst connecting portion 242 covers is larger than or similar to thearea of the first light-emitting unit 272.

As shown in FIGS. 2A and 2B, the second light-emitting unit 274 iscorresponding to the second region 230 and the second connecting region260. The structures and functions of a second protection portion 232, athird electrical joint portion 234 and a fourth electrical joint portion236 of the second region 230 can be the same or similar to those of thefirst protection portion 212, the first electrical joint portion 214 andthe second electrical joint portion 216. The structures and functions ofa third connecting portion 262, a third necking portion 264, a fourthconnecting portion 266 and a fourth necking portion 248 of the secondconnecting region 260 can be the same or similar to those of the firstconnecting portion 242, the first necking portion 244, the secondconnecting portion 246 and the second necking portion 248. Similarly,the third light-emitting unit 276 is corresponding to the third region250 and the third connecting region 280. The structures and functions ofa third protection portion 252, a fifth electrical joint portion 254 andan sixth electrical joint portion 256 of the third region 250 can be thesame or similar to those of the first protection portion 212, the firstelectrical joint portion 214 and the second electrical joint portion216. The structures and functions of a fifth connecting portion 282, afifth necking portion 284, an sixth connecting portion 286 and an sixthnecking portion 288 of the third connecting region 280 can be the sameor similar to those of the first connecting portion 242, the firstnecking portion 244, the second connecting portion 246 and the secondnecking portion 248.

FIG. 3A shows a top view of a first region 310 and a first contactingregion 340 corresponding to a first light-emitting unit 372 inaccordance with one embodiment of present application. FIG. 3B shows across-sectional view of the first light-emitting unit 372 connected tothe first contacting region 340 disclosed in FIG. 3A. Referring to FIGS.3A and 3B, what differs FIG. 3A from FIG. 2A is in the first region 310including two protection portions 312, 314. In one embodiment, acontacting electrode 372-1, a first connecting portion 342 of the firstcontacting region 340 and a first electrical connecting portion 311 arecovered by the protection portions 312. A portion of a first neckingportion 344 is covered by the protection portions 312. Besides, acontacting electrode 372-2, a second connecting portion 346 and a secondelectrical connecting portion 313 are covered by the protection portions314. Besides, a portion of a second necking portion 348 is covered bythe protection portions 314.

FIG. 4 shows a top view of a carrier 420 of a light-emitting device 400in accordance with one embodiment of present application. In oneembodiment, the carrier 420 includes an upper conductive layer, whereinthe upper conductive layer includes a first connecting region 440, asecond connecting region 460 and a third connecting region 480. Takingthe first connecting region 440 as an example, the difference betweenthe first connecting region 440 in FIG. 4 and the first contactingregion 240 in FIG. 2A is that the width or area of a first connectingportion 442 is larger than those of a corresponding electrode (notshown) of a first light-emitting unit 472. In one embodiment, the widthof the first connecting portion 442 is larger than the width W4 of thefirst light-emitting unit 472, and a width a first necking portion 444is smaller than the width of the first connecting portion 442.Similarly, a width of a second connecting portion 446 is larger thewidth W4 of the first light-emitting unit 472, and a width of a secondnecking portion 448 is smaller than the width of a second connectingportion 446. In another embodiment, the width of the first connectingportion 442 is equal to or smaller than the width W4 of the firstlight-emitting unit 472. Besides, a second light-emitting unit 474 iscorresponding to the second connecting region 460. The structures andfunctions of a third connecting portion 462, a third necking portion464, a fourth connecting portion 466, and a fourth necking portion 468of the second connecting region 460 can be the same or similar to thoseof the first connecting portion 442, the first necking portion 444, thesecond connecting portion 446 and the second necking portion 448.Furthermore, the third light-emitting unit 476 is corresponding to thethird connecting region 480. The structures and functions of a fifthconnecting portion 482, a fifth necking portion 484, an sixth connectingportion 486 and a sixth necking portion 488 of the third connectingregion 480 can be the same or similar to those of the first connectingportion 442, the first necking portion 444, the second connectingportion 446 and the second necking portion 448. When the area of theconnecting portion of the conductive layer is increased, the differencein height positions of and the tilting of the light-emitting units dueto the different volumes thereof can be improved. In detail, the largerthe area of the connecting portion of the conductive layer, the flatterthe connecting portion is on the connecting portion for connecting theelectrode of the light-emitting unit in each region. Thus, even thoughthe volumes of the connecting portions are different, the difference inheight positions of the light-emitting units is not too large.

FIGS. 5A˜5J show a manufacturing process of a light-emitting device 100in accordance with one embodiment of present application. Referring toFIG. 5A, a carrier is provided, wherein the carrier includes aninsulating layer 522, an upper conductive layer 524, and a lowerconductive layer 526. The upper conductive layer 524 and the lowerconductive layer 526 respectively have a plurality of connecting points,wherein the plurality of connecting points is able to electricallyconnect with a plurality of light-emitting elements. In one embodiment,each of the plurality of light-emitting elements includes threelight-emitting units, wherein each of the three light-emitting unitsneeds two electrodes corresponding to the connecting points of the upperconductive layer 524 or the lower conductive layer 526. Thus, the upperconductive layer 524 includes 3*2*N connecting points, wherein N can bean integral larger than 1. The three light-emitting units have a commonelectrode, so the lower conductive layer 526 includes 4*N connectingpoints.

Referring to FIG. 5B, glue 561 with electrically conductive particles(not shown) is formed on the upper conductive layer 524 through apatterned jig 512 to form unsolidified blocks 562′. The patterned jig512 can be a stencil or a printing plate. In one embodiment, thepositions where the unsolidified blocks 562′ are formed on arecorresponding to the positions which a group of the light-emitting unitselectrically connects to, and are regions which two electrodes of alight-emitting unit are corresponding to. In another embodiment, each ofthe positions of the unsolidified blocks 562′ is corresponding to theposition which each of the electrodes of each light-emitting unit of onegroup of the light-emitting units electrically connects to, wherein thegroup of the light-emitting units means the light-emitting units whichemit light with the same peak wavelength (Wp) or the same color. Forexample, all of the light-emitting units in a group emit red light, allof the light-emitting units in a group emit blue light, or all of thelight-emitting units in a group emit green light. Referring to FIG. 5C,a first group 542 of light-emitting units is connected with theunsolidified blocks 562′ and formed on the upper conductive layer 524.In one embodiment, referring to FIGS. 5C and 5D, the light-emittingunits 542-1, 542-2 of the first group 542 are formed on the upperconductive layer 524 one by one. To be more specific, the light-emittingunit 542-1 is firstly formed on the upper conductive layer 524 andanother light-emitting unit 542-2 is formed subsequently. Alternatively,the light-emitting units 542-1, 542-2 can be formed on the upperconductive layer 524 at the same time.

Referring to FIG. 5D, in one embodiment, groups 542, 544, 546 ofmultiple light-emitting units are formed on the same carrier, and themultiple light-emitting units 542-1, 544-1, 546-1, 542-2, 544-2, 546-2are respectively formed on different unsolidified blocks 562′ on theupper conductive layer 524. In FIG. 5D, in each of the groups, thenumber of the light-emitting units is 2, but not limited to, or can bean integer larger 1.

FIG. 5E and FIG. 5F respectively show detailed structures of oneunsolidified block and one solidified block connecting thelight-emitting unit 542-1 and carrier 520. Referring to 5E, theelectrically conductive particles 562′-2 in the unsolidified blocks 562′are spread in a protection portion 562′-1. The protection portion 562′-1has not solidified, so protection portion 562′-1 is in liquid state. Inone embodiment, during solidifying process, the viscosity of theprotection portion 562′-1 is firstly decreased and then increased, andthe electrically conductive particles 562′-2 gather between orsurrounding the electrodes 542-1 a, 542-1 b of the light-emitting unit542-1 and the upper conductive layer 524. The electrically conductiveparticles 562′-2 experience a molten state during gathering. Referringto 5F, after the protection portion 562′-1 is solidified, theelectrically conductive particles 562′-2 form electrical connectingportions 562-2, and the protection portion 562′-1 forms a solidifiedprotection portion 562-1. In one embodiment, a part of the electricallyconductive particles 562′-2 does not gather between or surrounding theelectrodes 542-1 a, 542-1 b and the upper conductive layer 524, so thepart of the electrically conductive particles 562′-2 separate to eachother and exist between the electrical connecting portions 562-2.

Referring to FIG. 5G, connecting structures 562 between thelight-emitting units 542-1, 542-2 of the first group, the light-emittingunits 544-1, 544-2 of a second group, the light-emitting units 546-1,546-2 of a third group, and the upper conductive layer 524 aresolidified and in electrical connecting state. In one embodiment, thesolidification of the connecting structures 562 and the electricalconnection among the light-emitting units 542-1, 542-2 of the firstgroup, the light-emitting units 544-1, 544-2 of the second group, thelight-emitting units 546-1, 546-2 of the third group, and the upperconductive layer 524 are formed at the same time. In another embodiment,the light-emitting units 542-1, 542-2 of the first group are disposed onthe upper conductive layer 524, and the corresponding unsolidifiedblocks 562′ can be firstly solidified and form electrical connection.After that, the light-emitting units 544-1, 544-2 of the second groupare disposed on the upper conductive layer 524, and the correspondingunsolidified blocks 562′ are solidified and form electrical connection.Then, the light-emitting units 546-1, 546-2 of the third group aredisposed on the upper conductive layer 524, and the correspondingunsolidified blocks 562′ are solidified and forms electrical connection.Referring to FIG. 5H, a transparent unit 580′ is formed to cover thelight-emitting units 542-1, 542-2 of the first group, the light-emittingunits 544-1, 544-2 of the second group and the light-emitting units546-1, 546-2 of the third group. In one embodiment, the transparent unit580′ continuously covers the light-emitting units 542-1, 542-2 of thefirst group, the light-emitting units 544-1, 544-2 of the second groupand the light-emitting units 546-1, 546-2 of the third group. The methodof forming the transparent unit 580′ includes coating and moldingprocesses. In one embodiment, after the transparent unit 580′ coveringthe group of light-emitting units 542, the second group oflight-emitting units 544 and the third group of light-emitting units546, the transparent unit 580′ is solidified.

FIG. 5I and FIG. 5J show the steps of separating the light-emittingdevices. In one embodiment, the insulating layer 522 of the carrier andthe transparent unit 580′ are separated in two steps. Referring to FIG.5I, the first separation step includes cutting the insulating layer 522of the carrier to form cutting lanes by a cutting tool 534. Referring toFIG. 5J, the second separation step includes cutting the transparentunit 580′ to form light-emitting devices 500-1, 500-2 by a cutting tool534. In another embodiment, the sequence of cutting the insulating layer522 of the carrier and cutting the transparent unit 580′ can be changed,so the transparent unit 580′ can be separated before separating theinsulating layer 522 of the carrier. In another embodiment, theinsulating layer 522 and the transparent unit 580′ can be separated inthe same step so the side walls of the insulating layer 522 and thetransparent unit 580 are able to be coplanar.

FIG. 6A shows a three-dimensional figure of a light-emitting device 600in accordance with one embodiment of present application. FIG. 6B showsa top view of the light-emitting device 600. FIG. 6C shows a bottom viewof the light-emitting device 600. The light-emitting device 600 includesa carrier 620, a light-emitting element 640, a connecting structure 660,and a transparent unit 680. In one embodiment, the light-emittingelement 640 is formed on the carrier 620, the connecting structure 660is formed between the carrier 620 and the light-emitting element 640,and the transparent unit 680 covers the light-emitting element 640 andthe connecting structure 660. The specific structures, functions andforming methods of the carrier 620, the light-emitting element 640, theconnecting structure 660 and the transparent unit 680 can be referred toFIG. 1 and the related paragraphs.

What differs the light-emitting device 600 in FIG. 6A from thelight-emitting device 100 are the light-emitting element 640 includingonly one light-emitting unit for emitting a first light and thetransparent unit 680 including wavelength conversion material excited bythe first light for emitting a second light. In one embodiment, a lightemitted from the light-emitting device 600 is a mixed light including atleast two lights with different wavelengths and the color thereof is awhite light. In one embodiment, the light-emitting element 640 comprisesa blue light-emitting diode for emitting a first light when driven by anelectrical power. The first light has a dominant wavelength or a peakwavelength between 430 nm˜490 nm. In another embodiment, thelight-emitting element 640 comprises a UV light-emitting diode, and thefirst light has a dominant wavelength or a peak wavelength between 400nm˜430 nm. The wavelength conversion material in the transparent unit680 can be wavelength conversion particles dispersed in the transparentunit (not shown).

In one embodiment, after the wavelength conversion material absorbs thefirst light, such as UV or blue light, the wavelength conversionmaterial is excited to emit a second light which is a yellow light, ofwhich the dominant wavelength or peak wavelength is between 530 nm˜590nm. In another embodiment, after the wavelength conversion materialabsorbs the first light, such as UV or blue light, the wavelengthconversion material is excited to emit a second light which is a greenlight, of which the dominant wavelength or peak wavelength is between515 nm˜575 nm. In another embodiment, after the wavelength conversionmaterial absorbs the first light, such as UV or blue light, thewavelength conversion material is excited to emit a second light whichis a red light, of which the dominant wavelength or peak wavelength isbetween 600 nm˜660 nm.

The wavelength conversion material comprises one type of wavelengthconversion particles or multiple types of wavelength conversionparticles. In one embodiment, the wavelength conversion materialcomprises multiple types of wavelength conversion particles being ableto emit green and red lights. Thus, besides emitting the second lightwhich is green light, the wavelength conversion material is able to emita third light which is a red light and can be mixed with the firstlight, which is not absorbed, to form a mixed light. In anotherembodiment, the first light is completely or almost completely absorbedby the wavelength conversion material. In the description, “almostcompletely” means, in the mixed light, a light intensity of the firstlight is equal to or smaller than 3% of the light intensity of thesecond light or third light.

The material of the wavelength conversion material includes inorganicphosphor, organic fluorescent colorant, semiconductor or combinationthereof. The semiconductor includes nano-crystal semiconductor, such asquantum dot.

Referring to FIG. 6B, a portion of an upper conductive layer 624 of thecarrier 620 of the light-emitting device 600 is covered by thelight-emitting element 640 and a portion thereof is exposed. Besides,the transparent unit 680 covers the light-emitting element 640 and theexposed upper conductive layer 624. Referring to FIG. 6C, a lowerconductive layer 626 of the light-emitting device 600 includes twoseparating electrode pads. In one embodiment, one of the electrode padshas one bevel for identification purpose.

FIG. 7 shows a top view of a carrier 720 of a light-emitting device 700in accordance with one embodiment of present application. In oneembodiment, FIG. 7 and FIGS. 6A˜6C describe the same embodiment, so FIG.7 can be read with FIGS. 6A˜6C. In one embodiment, the carrier 720includes an upper conductive layer, and the upper conductive layerincludes a connecting region 760. The connecting region 760 includes afirst connecting portion 762, a first necking portion 764, a secondconnecting portion 766, and a second necking portion 768. In oneembodiment, the connecting region 760 is corresponding to alight-emitting unit 740. The light-emitting unit 740 covers the firstnecking portion 764 and the second necking portion 768. The specificstructure, function and forming method of the connecting region 760 canbe referred to FIG. 2A or FIG. 4 and the related paragraphs.

FIG. 8 shows a display module 800 in accordance with one embodiment ofpresent application. The display module 800 includes a carrier 820, suchas a circuit board, and a plurality of light-emitting devices 841, 842,843. In one embodiment, the plurality of light-emitting devices 841,842, 843 is arranged in an array on the carrier 820 and electricallyconnects the circuit of the carrier 820. In one embodiment, each of theplurality of light-emitting devices 841, 842, 843 is a pixel, whereinthe specific structure thereof can be a light-emitting device shown inFIGS. 1A˜1D. A surface of the carrier 820 has a light-absorbing layer(not shown), such as black layer, for improving the contrast of thedisplay module 800 as playing image. In one embodiment, in the top view,the shape of the plurality of light-emitting devices 841, 842, 843 isrectangle, such as square, and the size thereof is between 0.1 mm˜1 mm.In another embodiment, the size of the plurality of light-emittingdevices 841, 842, 843 is between 0.1 mm˜0.5 mm. In another embodiment,the size of the plurality of light-emitting devices 841, 842, 843 isbetween 0.2 mm-2 mm. In another embodiment, the size of the plurality oflight-emitting devices 841, 842, 843 is between 0.5 mm˜1.2 mm. Inanother embodiment, the plurality of light-emitting devices 841, 842,843 is a white light source, and the specific structure thereof can bethe light-emitting device shown in FIGS. 6A˜6C.

FIG. 9A shows a display device 900 in accordance with one embodiment ofpresent application. The display device 900 includes a carrier 920, aplurality of display modules 941˜949 formed on the carrier 920, a frame960 surrounds the plurality of display modules 941˜949 and a panelcovers the plurality of display modules 941˜949 and the frame 960. Inone embodiment, a gap between any two neighbor display modules of theplurality of display modules 941˜949 can be very small, and any twoneighbor display even lean against to each other.

FIG. 9B shows a light-emitting module 900B in accordance with oneembodiment of present application. The light-emitting module 900Bincludes a carrier 910, a plurality of the light-emitting devices 601,602 formed on the carrier 910. The light-emitting device 601 includesthe light-emitting element 640 and the transparent unit 680. Theplurality of the light-emitting devices 601, 602 can be arranged as anarray on the carrier 910, and a surface of the carrier 910 has a circuitlayer (not shown) for electrically connecting the plurality of thelight-emitting devices 601, 602. In one embodiment, the plurality of thelight-emitting devices 601, 602 is a white light source, and thespecific structure thereof can be the light-emitting device shown inFIGS. 6A˜6C. In one embodiment, the light-emitting module 900B is abacklight module of a display.

FIGS. 10A˜10K show a process of manufacturing a display module 800 inaccordance with one embodiment of present application. In oneembodiment, the specific structure of the light-emitting device of thedisplay module 800 refers to FIG. 1A. Referring to FIG. 10A, a carrieris provided. The carrier includes an insulating layer 1022, an upperconductive layer 1024 and a lower conductive layer 1026. The upperconductive layer 1024 and the lower conductive layer 1026 respectivelyhave a plurality of connecting points. It is noteworthy that the widthof each of the electrode pads of the lower conductive layer 1026 can bedesignedly larger than the width of each of the electrodes of thelight-emitting units 542-1, 544-1, 546-1, 542-2, 544-2, 546-2 so thefollowing step of inspection becomes easier. The specific structure ofthe insulating layer 1022, the upper conductive layer 1024 and the lowerconductive layer 1026 can be referred to FIG. 5A and the relatedparagraphs.

Referring to FIG. 10B, glue 1014 with electrically conductive particles(not shown) is formed on the upper conductive layer 1024 through holes1012 a, 1012 b of a patterned jig 1012 and form unsolidified blocks562′. The specific description of the glue 1014, the patterned jig 1012and the unsolidified blocks 562′ can be referred to FIG. 5B and therelated paragraphs. Referring to FIG. 10C, the light-emitting units542-1, 542-2 are connected with the unsolidified blocks 562′ and formedon the upper conductive layer 1024. The function and the method offorming the light-emitting units 542-1, 542-2 on the upper conductivelayer 1024 can be referred to the FIG. 5C and the related paragraphs.Referring to FIG. 10D, the light-emitting units of the first group 542,the second group 544, and the third group 546 are formed on the samecarrier and the unsolidified blocks 562′ are solidified to form theelectrical connecting portions 562-2 electrically connecting to theupper conductive layer 1024. In one embodiment, there are at least threegroups of the light-emitting units. The specific description of thegroup of the light-emitting units can be referred to FIG. 5B and therelated paragraphs.

Referring to FIG. 10E, after the light-emitting units 542-1, 544-1,546-1, 542-2, 544-2, 546-2 electrically connecting to the upperconductive layer 1024, the step of inspection can be performed. In oneembodiment, the step of inspection is conducted by an inspecting deviceto inspect the light-emitting units 542-1, 544-1, 546-1, 542-2, 544-2,546-2. The inspecting device includes a inspecting board 1031 and asensing unit 1032 to check whether each of the light-emitting units542-1, 544-1, 546-1, 542-2, 544-2, 546-2 meets the criteria forscreening out the unqualified units. The inspecting board 1031 is ableto electrically connect to the lower conductive layer 1026. In oneembodiment, the width or area of the lower conductive layer 1026 islarger than the width or area of each of the electrodes of thelight-emitting units 542-1, 544-1, 546-1, 542-2, 544-2, 546-2, Thus,even the size of each of the light-emitting units 542-1, 544-1, 546-1,542-2, 544-2, 546-2 is small, it is easier to conduct the inspection bythe inspecting device. The criteria of the inspection includewavelength, intensity or Chromatic coordinate value. The unqualifiedunits are inspected in the step of inspection so the yield ofmanufacturing the display module 800 can be improved and the number oftimes of repairing the display module 800 can be decreased.

Referring to FIG. 10F, as the light-emitting unit 542-1 is identified asan unqualified unit in the inspection step, referring to FIG. 10F, thelight-emitting unit 542-1 can be removed. In one embodiment, theadhesion between the light-emitting unit 542-1 and the carrier can bedecreased by heating, and then the light-emitting unit 542-1 can beremoved. Referring to FIG. 10G, another light-emitting unit 542-1′ isformed on the position of the light-emitting unit 542-1 with anotherunsolidified block 562′.

Referring to FIG. 10H, the first light-emitting units 542-1′, 542-2, thesecond light-emitting units 544-1, 544-2 and the third light-emittingunits 546-1, 546-2 are covered by the transparent unit 580′. Thefunctions and the forming method of the transparent unit 580′ can bereferred to FIG. 5H and the related paragraphs. Referring to FIG. 10I, afirst separation step for forming the light-emitting device includescutting the insulating layer 1022 of the carrier for forming a cuttingline by using a cutting tool 532. Referring to FIG. 10J, a secondseparation step for forming the light-emitting device includes cuttingthe transparent unit 580′ for forming the light-emitting devices 1001,1002 by using a cutting tool 534. The function and the forming method ofseparating the light-emitting devices can be referred to FIGS. 5I and 5Jand the related paragraphs.

Referring to FIG. 10K, in a transfer step, the separated light-emittingdevices 1001, 1002, 1003 are transferred from a temporary substrate1031′ to a target substrate 1032 for forming the display module 800. Theway for transferring the light-emitting devices 1001, 1002, 1003 to thetarget substrate 132 can be one by one or once all together.

FIGS. 11A˜11I show a manufacturing process of the display module 800 inaccordance with one embodiment of present application. In oneembodiment, the description of the structure of the light-emittingdevice in the display module 800 can be referred to FIG. 6A. Referringto FIG. 11A, a carrier is provided. The carrier includes an insulatinglayer 1122, an upper conductive layer 1124 and a lower conductive layer1126. The upper conductive layer 1124 and the lower conductive layer1126 respectively have a plurality of connecting points. The descriptionof the structures of the insulating layer 1122, the upper conductivelayer 1124 and the lower conductive layer 1126 can be referred to FIGS.5A, 10A and the related paragraphs.

Referring to FIG. 11B, glue 1114 with electrically conductive particles(not shown) forms unsolidified blocks 1162′ on the upper conductivelayer 1124 through holes 1112 a, 1112 b of a patterned jig 1112. Thedetails of the glue 1114, the patterned jig 1112 and the unsolidifiedblocks 1162′ can be referred to FIG. 5B and the related paragraphs.Referring to FIG. 11C, the light-emitting units 1141, 1142, 1143, 1144,1145, 1146 are connected with the unsolidified blocks 1162′ and formedon the upper conductive layer 1124. The function of the light-emittingunits 1141, 1142, 1143, 1144, 1145, 1146 and the forming method thereofon the upper conductive layer 1124 can be referred to FIG. 5C and therelated paragraphs. Referring to FIG. 11D, the light-emitting units1141, 1142, 1143, 1144, 1145, 1146 are formed on the same carrier, andthen the unsolidified blocks 1162′ are solidified to form electricalconnecting portions 1162-2 electrically connecting with the upperconductive layer 1124. A transparent unit 1180′ is then formed to coverthe light-emitting units 1141, 1142, 1143, 1144, 1145, 1146. Thefunction and forming method of the transparent unit 1180′ can bereferred to FIG. 5H and the related paragraphs. In one embodiment, thebefore forming the transparent unit 1180′, the light-emitting units1141, 1142, 1143, 1144, 1145, 1146 can be inspected to check whetherthere are any unqualified units.

Referring to FIG. 11E, a step of inspecting the light-emitting units1141, 1142, 1143, 1144, 1145, 1146 covered by the transparent unit 1180′are executed. The description of the inspection step can be referred toFIG. 10E and the related paragraphs. In one embodiment, the transparentunit 1180′ includes wavelength conversion material, so the lights forinspection are the mixed lights of the lights from the light-emittingunits 1141, 1142, 1143, 1144, 1145, 1146 and the lights excited by thewavelength conversion material.

Referring to FIG. 11F, the step of separating the light-emitting devicesincludes cutting the insulating layer 1122 and the transparent unit1180′ shown in FIG. 11D. The transparent unit 1180′ in FIG. 11D is cutto form separate transparent units 1180. The detailed description of thestep of separating the light-emitting devices can be referred to FIGS.5I and 5J the related paragraphs. In one embodiment, after detecting thelight-emitting devices 1101, 1102, 1103, 1104, 1105, 1106 formed afterthe separation step, the light-emitting device 1102 is determined asunqualified in the inspection step. Referring to FIG. 11G, after thelight-emitting devices 1101, 1102, 1103, 1104, 1105, 1106 are formed ona temporary substrate 1152, the light-emitting device 1102 can beremoved from the temporary substrate 1152. FIG. 11H shows that alight-emitting device 1102′ is formed and replaces the light-emittingdevice 1102. In another embodiment, after the light-emitting device 1102is removed from the temporary substrate 1152, it is not necessary toplace another light-emitting device and a vacancy is formed (not shown).

Referring to FIG. 11I, in a transfer step, the multiple light-emittingdevices 1101, 1102′, 1103 are transferred from a temporary substrate1151 to a target substrate 1152 for forming a display module 800. Theway to transfer the light-emitting devices 1101, 1102′, 1103 to thetarget substrate 1152 can be done one by one or once all together.

FIG. 12A shows a three-dimensional figure of a light-emitting device1200 in accordance with one embodiment of present application. FIG. 12Bshows a top view of the light-emitting device 1200 disclosed in FIG.12A, and FIG. 12C shows a bottom view of the light-emitting device 1200disclosed in FIG. 12A. The light-emitting device 1200 includes a carrier1220, a light-emitting element 1240, a connecting structure 1260 and atransparent unit 1280. The structure, function and the manufacturingmethod of the carrier 1220, the light-emitting element 1240, theconnecting structure 1260 and the transparent unit 1280 can be referredto the related paragraphs of the light-emitting device 100.

The difference between the light-emitting device 1200 and thelight-emitting device 100 includes the structure of the carrier 1220 andarrangement of the light-emitting units 1242, 1244, 1246. In oneembodiment, the carrier 1220 includes an insulating layer 1222, an upperconductive layer 1224, a lower conductive layer 1226, and conductivethrough holes 1228. The upper conductive layer 1224 includes sixconnecting portions (or three pairs of upper pads) and six neckingportions (or six conductive traces), wherein two upper pads of eachpairs are adjacent to but separate from each other. Besides, each pairof the upper pads is corresponding each of the light-emitting units1242, 1244, 1246. Referring to FIG. 12B, in one embodiment, from up todown, the first light-emitting unit 1242, the second light-emitting unit1244 and the third light-emitting unit 1246 are arranged sequentiallyand respectively correspond to one pair of the upper pads. The firstlight-emitting unit 1242, the second light-emitting unit 1244, and thethird light-emitting unit 1246 are arranged as a character of “≡” (or“III”). In one embodiment, the upper pads are arranged in an array of3×2 for corresponding to the arrangement of light-emitting units 1242,1244, 1246. Besides, the three traces are parallel to each other andextend from the inner side of the upper conductive layer 1224 to thesame side (first side). Similarly, another three traces are parallel toeach other and extends from the inner side of the upper conductive layer1224 to the other side (second side).

The details of patterned structure of the lower conductive layer 1226can be referred to FIG. 12C. In one embodiment, the lower conductivelayer 1226 includes a first lower conductive pad 1226 a, a second lowerconductive pad 1226 b, a third lower conductive pad 1226 c and a fourthlower conductive pad 1226 d. The material and function of the lowerconductive layer 1226 can be referred to FIG. 1C and the relatedparagraphs. Referring to FIG. 12C, each of the first lower conductivepad 1226 a, the second lower conductive pad 1226 b, and the third lowerconductive pad 1226 c has a long side and a short side. The fourth lowerconductive pad 1226 d is a common electrode, and the fourth lowerconductive pad 1226 d has two concave portions and three convexportions, wherein the three convex portions are respectively correspondto the first lower conductive pad 1226 a, the second lower conductivepad 1226 b and the third lower conductive pad 1226 c. Thus, when thelight-emitting device 1200 electrically connects with a circuit board ina subsequent process, the distribution of the electrically connectingmaterial, such as solder, between the lower conductive layer 1226 andthe circuit board can be more uniform for preventing “Tombstone”phenomenon. In one embodiment, there are six conductive through holes1228 respectively connecting the six traces and being located on thefour corners and center positions of two sides, wherein each of the twosides means the side which each of the three traces connect to. In oneembodiment, the side of the light-emitting device 1200 is smaller than500 μm, and a distance between two upper pads of each pair is smallerthan 100 μm, and the length of each of the short sides of lowerconductive pad 1226 a, 1226 b, 1226 c is smaller than 150 μm.

FIG. 13A shows a three-dimensional figure of a light-emitting device1300 in accordance with one embodiment of present application. FIG. 13Bshows a top view of the light-emitting device 1300 disclosed in FIG.13A. FIG. 13C shows a bottom view of the light-emitting device 1300disclosed in FIG. 13A. The light-emitting device 1300 includes a carrier1320, a light-emitting element 1340, a connecting structure 1360 and atransparent unit 1380. The structures, functions and the manufacturingmethod of the carrier 1320, the light-emitting element 1340, theconnecting structure 1360 and the transparent unit 1380 can be referredto the related paragraphs of the light-emitting device 100.

The difference between the light-emitting device 1300 and thelight-emitting device 100 includes the structure of the carrier 1320 andthe arrangement of the light-emitting units 1342, 1344, 1346 of thelight-emitting element 1340. In one embodiment, the carrier 1320includes an insulating layer 1322, an upper conductive layer 1324, alower conductive layer 1326, and conductive through holes 1328. Thedetails of the patterned structure of the upper conductive layer 1324can be referred to FIG. 13B. The upper conductive layer 1324 includessix connecting portions (or three pairs of upper pads) and six neckingportions (or six conductive traces). The arrangement of the upper padsand the light-emitting element 1340 can be referred to FIG. 12B and therelated paragraphs. The difference between the upper conductive layer1324 and the upper conductive layer 1224 disclosed in FIG. 12B is thatthe upper conductive layer 1324 includes at least two conductive tracesfor connecting two upper pads.

The details of patterned structure of the lower conductive layer 1326can be referred to FIG. 13C. In one embodiment, the lower conductivelayer 1326 includes a first lower conductive pad 1326 a, a second lowerconductive pad 1326 b, a third lower conductive pad 1326 c, and a fourthlower conductive pad 1326 d. The materials and functions of the lowerconductive pads 1326 a, 1326 b, 1326 c, 1326 d can be referred to FIG.1C and the related paragraphs. In one embodiment, the four conductivethrough holes 1328 are respectively located in the four corners of thecarrier 1320. In one embodiment, at least one side length of thelight-emitting device 1300 is smaller than 500 μm, a gap between anyneighboring two lower conductive pads 1326 a, 1326 b, 1326 c, 1326 d issmaller than 200 μm, and a side length of each of the lower conductivepads 1326 a, 1326 b, 1326 c, 1326 d is smaller than 200 μm.

FIG. 14A shows a three-dimensional figure of a light-emitting device1400 in accordance with one embodiment of present application, FIG. 14Bshows a top view of the light-emitting device 1400 disclosed in FIG.14A, and FIG. 14C shows a bottom view of the light-emitting device 1400disclosed in FIG. 14A. The light-emitting device 1400 includes a carrier1420, a light-emitting element 1440, a connecting structure 1460, and atransparent unit 1480. The structures, functions and the manufacturingmethod of the carrier 1420, the light-emitting element 1440, theconnecting structure 1460 and the transparent unit 1480 can be referredto the related paragraphs of the light-emitting device 100.

The difference between the light-emitting device 1400 and thelight-emitting device 100 is that the structure of the carrier 1420 andthe arrangement of the light-emitting units 1442, 1444, 1446 of thelight-emitting element 1440. In one embodiment, the carrier 1420includes an insulating layer 1422, an upper conductive layer 1424, alower conductive layer 1426 and conductive through holes 1428. Thedetails of the patterned structure of the upper conductive layer 1424can be referred to FIG. 14B. The upper conductive layer 1424 includessix connecting portions (or three pairs of upper pads), and six neckingportions (or six conductive traces). The arrangement of the upper padsand the light-emitting element 1440 can be referred to FIG. 12B and therelated paragraphs. The difference between the upper conductive layer1424 and the upper conductive layer 1224 disclosed in FIG. 12B is thatthe upper conductive layer 1424 includes at least four conductivethrough holes 1428 on the sides of the carrier 1420, not in the cornersthereof. In other words, the six conductive through holes 1428 are alllocated on the sides of the carrier 1420.

The patterned structure of the lower conductive layer 1426 can bereferred to FIG. 14C. In one embodiment, the lower conductive layer 1426includes a first lower conductive pad 1426 a, a second lower conductivepad 1426 b, a third lower conductive pad 1426 c, and a fourth lowerconductive pad 1426 d. The materials and functions of the lowerconductive pads 1426 a, 1426 b, 1426 c, 1426 d can be referred to FIG.12C and the related paragraphs. The difference between the lowerconductive layer 1426 and the lower conductive layer 1226 is that thefourth lower conductive pad 1426 d includes a bevel side. In oneembodiment, fat least one side length of the light-emitting device 1400is smaller than 400 μm, a gap between two upper pads of each pair issmaller than 80 μm, and a side length of each short side of the lowerconductive pads 1426 a, 1426 b, 1426 c is smaller than 100 μm.

Although the present application has been explained above, it is not thelimitation of the range, the sequence in practice, the material inpractice, or the method in practice. Any modification or decoration forpresent application is not detached from the spirit and the range ofsuch.

What is claimed is:
 1. A light-emitting device, comprising: a carrier,comprising a first connecting portion and a first necking portionextending from the first connecting portion, wherein the firstconnecting portion has a first width, and the first necking portion hasa second width smaller than the first width; a light-emitting unitcomprising a first light-emitting layer being able to emit a first lightand a first contacting electrode formed under the first light-emittinglayer, wherein the first contacting electrode corresponds to the firstconnecting portion; and a connecting structure comprising a firstelectrical connecting portion and a protection portion surrounding thefirst connecting portion and the first electrical connecting portion,wherein the first electrical connecting portion electrically connectsthe first connecting portion and the first contacting electrode.
 2. Thelight-emitting device according to claim 1, wherein a ratio of thesecond width to the first width is smaller than 0.6.
 3. Thelight-emitting device according to claim 1, wherein the light-emittingunit further comprises a second contacting electrode, and the secondcontacting electrode and the first contacting electrode are on a sameside of the first light-emitting layer.
 4. The light-emitting deviceaccording to claim 3, wherein the connecting structure further comprisesa second electrical connecting portion electrical connects with thesecond contacting electrode, and the protection portion surrounds thesecond electrical connecting portion.
 5. The light-emitting deviceaccording to claim 3, wherein the connecting structure further comprisesa second electrical connecting portion electrically connects with thesecond contacting electrode and a second protection portion separatingfrom the protection portion and surrounding the second electricalconnecting portion.
 6. The light-emitting device according to claim 3,wherein the carrier further comprises a second connecting portioncorresponding to the second contacting electrode, and a smallestdistance between the first connecting portion and the second connectingportion is smaller than 100 μm.
 7. The light-emitting device accordingto claim 1, wherein the first electrical connecting portion has atemperature of liquidus melting point smaller than 210° C.
 8. Thelight-emitting device according to claim 7, wherein the protectionportion comprises a resin, and the resin has a glass transitiontemperature, wherein a difference between the temperature of liquidusmelting point and the glass transition temperature is smaller than 50°C.
 9. The light-emitting device according to claim 1, wherein the firstelectrical connecting portion comprises a surface with a bumpystructure.
 10. The light-emitting device according to claim 1, furthercomprising a second light-emitting layer being able to emit a secondlight, wherein the first light and the second light have different peakwavelengths.